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Raytheon Awarded Hybrid Silicon Compound Semiconductor Contract
Tewksbury MA (SPX) Oct 01, 2007 The Office of Naval Research has awarded Raytheon a $6.5 million contract to develop affordable, high-performance semiconductor integrated circuits for electronic-driven military systems. Defense Advanced Research Projects Agency (DARPA) is funding the contract as part of its Compound Semiconductor Materials on Silicon (COSMOS) program. Dr. Mark Rosker is DARPA's program manager. A Raytheon-led team will integrate high-performance compound semiconductors with low-cost commercial complementary metal oxide semiconductor silicon wafers to achieve superior cost-benefit performance compared with either technology on its own. "The objective is to develop a high-resolution analog-to-digital converter with low power consumption," said Dr. Katherine Herrick, Raytheon Integrated Defense Systems (IDS) program manager. "However, the benefits of the program go significantly beyond the specific objective. The processes lead to advanced low-cost analog and digital, microwave and millimeter-wave integrated circuits with applications for next-generation radar, communications and electronic warfare systems." "Our team's process of directly growing a compound semiconductor on a uniquely engineered silicon substrate provides a new technical approach that is creating a class of integrated circuits that will enable more affordable systems for the warfighter," said Mark Russell, vice president, IDS Engineering. Teaming with Raytheon IDS on the COSMOS project are Raytheon Systems Limited in Glenrothes, Scotland; Teledyne Scientific Imaging Company in Thousand Oaks, Calif.; Massachusetts Institute of Technology in Cambridge, Mass.; Paradigm Research LLC in Windham, N.H.; IQE in Bethlehem, Pa.; Soitec in Grenoble, France; and Silicon Valley Technology Center in San Jose, Calif. Community Email This Article Comment On This Article Related Links Raytheon Computer Chip Architecture, Technology and Manufacture Nano Technology News From SpaceMart.com
NASA Researchers Extend Life Of Hot Temperature Electronic Chip
Cleveland OH (SPX) Sep 14, 2007NASA researchers have designed and built a new circuit chip that can take the heat like never before. In the past, integrated circuit chips could not withstand more than a few hours of high temperatures before degrading or failing. This chip exceeded 1,700 hours of continuous operation at 500 degrees Celsius - a breakthrough that represents a 100-fold increase in what has previously been achieved. The new silicon carbide differential amplifier integrated circuit chip may provide benefits to anything requiring long-lasting electronic circuits in very hot environments. |
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