From the existing 3.3V AT60142E, Atmel has derived two new versions, the AT60142F with improved speed and power consumption, and the AT60142FT, a 5-Volt tolerant variant.

With the AT60142F/FT, Atmel offers solutions to applications that need fast computing and low power consumption, such as aerospace electronics or embarked systems.

Produced on Atmel's radiation hardened 0.25 um CMOS process, the AT60142F/FT are very low power CMOS asynchronous SRAMs organized as 512 K x 8 bits.

Both devices combine rad-hard capabilities - a latch-up threshold and a total dose up to 70-MeV and 300-Krad respectively - with a fast access time over the full military temperature range.

Compared to the AT60142E's original 20 ns access time, the AT60142F achieves 15 ns (66 Mhz) at a 180 mA operating current, while the AT60142FT achieves 17 ns at 170 mA.

Additional operating current specifications are available at various speeds ranging from 1 to 40 Mhz in either read or write modes.

The AT60142FT is a 5V tolerant variant of the AT60142F and offers an interface with signals coming from 5-Volt biased chips, while keeping the memory bias voltage at 3.3 Volts.

Compared to the other 5V 4-Mbit SRAMs, the AT60142FT achieves a 53 percent savings in power consumption at the same speed.

This has been achieved by replacing the implicated buffers by their 5V tolerant version, resulting in a guaranteed operating speed of 17 ns or 59 Mhz.

Both the AT60142F and AT60142FT operate with a 3.3-Volt bias while an internal regulator biases the memory cell at 2.5V.

Hence, only a single 3.3-Volt supply voltage is needed at the board level, allowing designers to easily implement those new memories in any space designs.

To prevent the occurrence of multiple SEU induced errors in the same byte, Atmel has organized the AT60142F/FT memory plan in eight parallel blocks of 512K x 1.

This allows designers to use simple EDACs, thus improving application performance and minimizing development time and complexity.

The characterized SEU induced error rate is as low as 1E-7 error per bit per day.

As the AT60142E, the AT60142F/FT are housed in a 36-pin 500-mil wide dual in line flat pack - the smallest package available on the market for this type of SRAM; they weight only 3 grams, thus meeting the rigorous size and weight requirements of the aerospace industry.

Both memories are size-, pin- and pad-compatible with the AT60142E. Whether the AT60142F/FT are used in a packaged or die form, they can directly fit into the same sockets, or the same boards, Multi Chip Modules or hybrid substrates layouts as the AT60142E, thus avoiding expensive redesign.

"With these new versions, we are providing our customers with a complete 4-Mbit SRAM offering, including faster access time with a reduced power consumption, and a 5V tolerant option," said Dominique de Saint Roman, Atmel's Aerospace Marketing Manager.

"To meet the future aerospace requirements for packages with higher density and complexity, Atmel is currently investigating the development of wider data width memory modules."

The AT60142F is available in any Atmel standard space quality grades, including QML Q & V and ESCC levels. The packaged die and bare die support the SMD 5962-05208 specification.

The AT60142E development has been supported by the Centre National d'Etudes Spatiales (CNES), the French space agency.

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