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Giant leap in thin film resistivity change could power future AI electronics
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Giant leap in thin film resistivity change could power future AI electronics
by Riko Seibo
Tokyo, Japan (SPX) Nov 04, 2025

Researchers at Tokyo Metropolitan University have engineered a new atomically layered thin film material that exhibits a five order of magnitude drop in resistivity following oxidation. This performance surpasses the resistance reduction achieved in conventional, three-dimensional materials by over one hundred times.

The team used pulsed laser deposition to fabricate the crystalline film Sr3Cr2O7-d, categorized as a perovskite-type structure, and found that heating the film in air triggered dramatic changes in electrical properties.

Analysis revealed that the material's structure contained numerous oxygen vacancies, which were filled during heat treatment and annealing. This process also shifted the oxidation state of chromium atoms in the film. Compared to its three-dimensional counterpart SrCrO3, the layered film underwent distinct structural transformations. The interaction between the evolving atomic arrangement and chromium's oxidation state facilitated easier electron conduction through the material.

The methodology established here - combining oxidation and layered atomic design - offers a template for developing additional thin films with similar characteristics. These findings have implications for next-generation electronics, including memristors for AI computing and energy-efficient advanced chips.

The research was supported by the JSPS-KAKENHI Grant Number 20H02704 and utilized experimental resources from Japan Synchrotron Radiation Research Institute, Institute of Materials Structure Science (KEK), and Tohoku University as detailed in associated proposals.

Research Report:Oxidation-Induced Giant Resistivity Change Associated with Structural and Electronic Reconstruction in Layered Sr3Cr2O7-d Epitaxial Thin Films

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Tokyo Metropolitan University
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