CIGS, which stands for copper indium gallium selenium, has achieved the highest efficiency for thin-film photovoltaics at 19.9%, which rivals the performance of crystalline based silicon solar cells. With thin-film manufacturing techniques, CIGS thin-film solar cells can be made with 1/100th of the materials used in crystalline based silicon solar cells.

The Company believes that thin film CIGS represents second generation solar technology when compared to traditional poly-Si manufacturing technology. When compared to poly-Si, the Company believes CIGS provides for significantly reduced wafer thicknesses with a significant increase in per kilogram wattage production.

Also, CIGS avoids the cadmium toxicity issues surrounding the other mainstream thin-film technology, CdTe or cadmium telluride. In addition, the CIGS thin film solar cells can be made with much less energy input than conventional crystalline based silicon solar cells.

As previously announced, the Company has executed a Collaboration Development Agreement with PMI for the Company's pilot production project in Chengdu, China. The initial project focus is to develop a single junction solar cell with commercial efficiency utilizing materials provided by PMI and incorporated into the Company's ceramic sleeve solar technology.

The Company believes this will provide the baseline for development of a multi-stacked solar cell that could provide an even higher degree of efficiency. The ultimate goal of the project is to develop and produce a highly efficient, commercially viable, lower cost-per-watt solar energy cell.

Community
Email This Article
Comment On This Article

Related Links
All About Solar Energy at SolarDaily.com